Abstract
A detailed study has been made on the use of MeV heavy ions ( Z 1 = 6–8) for microbeam Rutherford backscattering (RBS) analysis, to improve the depth resolution of this technique. The algorithm for determination of the depth resolution was created and applied to the Zagreb microbeam facility. Theoretical estimates of depth resolution for C and O ion RBS analysis of thin oxide films and semiconductors, using annular silicon surface barrier detector (SSBD), are compared to those for proton backscattering analysis. Depth resolution in certain cases may be improved by increasing the heavy-ion energy. Therefore, by the proper choice of the heavy ion and the heavy-ion energy, the depth resolution may be improved, maintaining the efficiency of the RBS method.
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