Abstract
The authors report on the potential profiling in depth for promising oxide heterojunctions: La${}_{0.6}$Sr${}_{0.4}$MnO${}_{3}$ (LSMO)/Nb-doped SrTiO${}_{3}$ (Nb:STO) having different interfacial terminating layer and SrRuO${}_{3}$/Nb:STO heterojunctions. The precise depth-profiling analysis of LSMO/TiO${}_{2}$-Nb:STO interfaces with --La${}_{0.6}$Sr${}_{0.4}$O/TiO${}_{2}$/SrO-- structure reveals the existence of a certain thin depletion layer of 1--2 nm with an abrupt potential drop near the interface. In contrast, the ideal depletion layer is formed for other interfaces with a --SrO/TiO${}_{2}$/SrO-- terminating layer. These results suggest that the adjacency of TiO${}_{2}$ layer with La${}_{0.6}$Sr${}_{0.4}$O donor layers at the interface is responsible for the formation of the thin depletion layer near the interface.
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