Depth profiling of plasma anodized SiO 2/Si interface structures by using X-ray photoelectron spectroscopy

Abstract

The chemical structures of Si-SiO 2 interfaces formed by plasma anodization were investigated from the depth profiling measurements of Si 2p photoelectron spectra. For the region in the oxide less than 5 nm from the interface, the interface structures are the same as those for thermal oxides. However, for the region in the oxide more than 5 nm from the interface, the amounts of suboxides are larger as compared with those for thermal oxides. The structural difference was not found between the plasma anodic oxides formed on crystalline silicon and those formed on hydrogenated amorphous silicon.