Abstract
Highly strained InAs/InP heterostructures and In x Ga 1−x As/InAs single quantum wells on InP(100) substrates were grown by molecular beam epitaxy. The fabricated heterostructures were investigated by means of the selected-area X-ray photoelectron spectroscopy (SAXPS) depth profiling technique. The depth resolution of the SAXPS profiling was found to be limited mainly by the photoelectron information depth. It was demonstrated that the ternary compound InAs x P x is formed on the InP substrate during its deoxidation under an arsenic flux. The thickness of the InAs x P 1−x interfacial sublayer was determined and the segregation of indium on the sample and substrate surfaces was revealed from the SAXPS profiles.
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