Abstract
The gamma ray yield of the 11B(p,γ)12C resonance reaction at 163keV was applied to depth profiling. This reaction is capable of providing boron concentration versus depth up to more than 1μm in conductive and non-conductive films. To avoid the interferences of reactions of lighter elements, the gamma ray of 11.68MeV was selected for profiling. Using a numerical method, the interference of the higher resonances was subtracted. Comparison data from the 11B(p,α)2α reaction was taken for completeness. Additionally, the profiling capabilities of the 11B(p,γ)12C and 11B(p,α0)8Be reaction are compared.
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