Abstract
Depth profiling of In 0.53 Ga 0.47 As thin layers in InP using sputtered neutral mass spectrometry with grazing-incidence ion beam sputtering and laser post-ionization was performed and compared with SIMS and AES depth profiling. The depth resolution was improved by using grazing incidence (at an incident angle of 77°) of a 10 keV Ar + primary beam and was better than that in the AES measurement with 1 keV Ar + bombardment at 70.3° and sample rotation. The distortion of the indium profile at the In 0.53 Ga 0.47 As/InP interface that was observed in the SIMS measurement with 2 keV O 2 + bombardment at 81° was not observed in the grazing-incidence sputtered neutral mass spectrometry measurement.
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