Abstract
Depth profiles of vacancy-type defects in the active region of annealed Si+-implanted GaAs were measured by means of the monoenergetic positron beam measurements. Parabolic-type distributions for vacancy-type defects in the depth below the surface were observed in two-step annealed Si+-implanted GaAs. Activation properties by Hall measurements were improved by a two-step rapid thermal annealing technique, whereas the concentration of vacancy defects in active layer below the surface is not changed.
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