Depth profiles of the majority carrier concentration and the minority carrier effective lifetime in gettered GaAs

Abstract

The first results are reported on the concentration profiles of majority carriers and the effective lifetime profiles of minority carriers in thick (1.6 mm) GaAs plates subjected to surface gettering. It was established that the one-and two-sided coating of the GaAs plates with Y films, followed by heat treatment at 700–800°C, allows a high-resistivity material to be obtained with homogeneous distributions of the electron concentration and the hole lifetime in depth of the semiconductor.