Abstract
A study has been made to investigate the depth profiles of MeV C atoms implanted in a few common III–V semiconducting targets. Single crystal substrates of GaP, GaAs, GaSb, InP and InSb were used in the present study. They were implanted with C + and C 2 + ions at implantation energies of 1.00 and 2.00 MeV respectively, and a dose of 5×10 14 C-atoms cm −2. The projected range and longitudinal straggling of the implanted C atoms have been measured by the secondary ion mass spectroscopy (SIMS) technique and compared with the theoretical predictions. The measured range parameters of C + ions agree moderately well with the theory (TRIM) but the longitudinal straggling is significantly greater in the case of C 2 + implantations. In this case the measured R p values are also slightly lower as compared to that target implanted with C + ions. A tentative explanation for these results is presented.
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