Abstract
γ-FeSi 2 precipitates were produced in Si(001) wafers by an ion beam induced epitaxial crystallization process and subsequently annealed at temperatures in the range 700–900°C. The resulting Fe redistribution, phase transition and precipitate coarsening were studied using Rutherford backscattering, channeling and transmission electron microscopy techniques. It is shown that a γ to β phase transition starts at 700°C and it almost completed at 900°C. This is accompanied by an Fe redistribution and a coarsening process. The extracted activation energy for the coarsening process Q = 3.5 ± 0.3 eV is in excellent agreement with theoretical estimations assuming Ostwald ripening process.
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