Abstract
The factors responsible for the poor agreement between the experimental data on the depth of the generation of the Si L2,3 X-ray emission band excited by an electron impact in SiO2 layers and the results of the calculations performed in terms of the Borovskii-Rydnik phenomenological model modified for nonisotropic and nanostructured systems have been analyzed. It has been demonstrated that the most probable factor accounting for the disagreement is the effect of the roughness of the surface and interface of the SiO2/Si system under investigation in the range of low energies of primary electrons and a decrease in the sensitivity and the accuracy in the measurements in the range of large thicknesses and high energies. Since no errors have been revealed in the calculation model used, it has been employed to calculate the dependence of the depth of generation of the L X-ray emission bands in Mg, Si, Ti, Cr, Fe, and Cu crystals on the energy of electrons of the primary electron beam.
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