Depth distributions of sulfur implanted into silicon as a function of ion energy, ion fluence, and anneal temperature

Abstract

Depth distributions for sulfur (S) implanted in (100) and (111) silicon (Si) measured by secondary ion mass spectrometry are reported for S ion energies from 40 to 600 keV and ion fluences from 4×1012 to 4×1016 cm−2. The results of Pearson IV fits are tabulated for the energy and fluence series; the range parameters given are peak depth (Rm) and μ(Rp), σ(ΔRp), γ1, β2, and β′2 for both the peak of the distribution and the full curve (including the influence of the channeling tail). The S densities are measured from a maximum of 1021 down to <1015 cm−3 where the detection limit is probably caused by background oxygen (mass 32). Sulfur profiles are shown for annealing temperatures from 100 to 950 °C in (100) and (111) Si orientations. Sulfur is retained in the region of damage for densities above about 1018 cm−3, until an annealing temperature of 900 or 950 °C is reached, when the S is largely rejected from the Si crystal; the remaining S density is <1015 cm−3, in agreement with solid solubility.