Abstract
Concentration profiles of 4He implanted with energies of 0.25–80 keV in silicon have been measured. The method employed-ion beam sputter erosion in conjunction with the mass spectrometric detection of sputter released He atoms-offers several advantages over other techniques used for helium analysis: He depth distributions in very near-surface regions (< 10 nm) of solids are determined with a detection sensitivity of 5 × 10 18 He atoms/cm 3 in Si. Furthermore, a depth resolution of 3.1 nm is demonstrated as deduced from the measured interface width between an undoped and a He doped layer. Over the energy regime investigated the experimentally determined values of the mean projected range and the range straggling agree very well with theoretical data for amorphous silicon.
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