Depth distributions and range parameters for elements implanted into single-crystal diamonds and chemically vapor-deposited polycrystal diamond films

Abstract

We have implanted many elements, including hydrogen, lithium, boron, nitrogen, oxygen, sodium and phosphorus into diamond single crystals in random and channeling orientations, and into polycrystal diamond films obtained by chemical vapor deposition (CVD), at energies from 30 to 600 keV, and fluences from 10 13 to 10 15 cm -2. The resulting depth distributions were measured using secondary-ion mass spectrometry (SIMS) with both oxygen and cesium primary ion beams. The rarer isotopes 2H, 15N and 18O were used to enhance the SIMS detection limits and therefore the profile dynamic range. We report experimental values of peak depth or mode range R m, projected average range R p, range straggle or standard deviation Δ R p and skewness or third moment γ 1 for the implanted elements. Agreement between the experimental values of range and the Lindhard-Scharff-Schiøtt (LSS) calculations of Gibbons et al. is excellent for single-crystal diamond, but calculated values of the range straggle are about 50% of the experimental values. For the CVD films, the LSS calculated ranges are 40% greater than for single-crystal diamond, and the range straggles are 40–50% of the experimental values.