Abstract
The generation and propagation of dislocations in GaAsP-InGaAs strained-layer superlattices have been studied using x-ray topography and electron-beam-induced current in the scanning electron microscopy. It is shown that three-dimensional information about dislocations in the substrate, as well as in subsequently grown epilayers, can be obtained via a one-to-one correlation of images obtained from these two techniques. Various types of threading and misfit dislocations are identified and their location specified.
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