Abstract
ABSTRACTThe character of extended defects formed in high-energy S-ion implanted and rapid thermal annealed (RTA'd) Si has been found by transmission electron microscopy (TEM) to be dependent on the depth at which the defects have formed in the ion-implanted regions. Si implanted with 6 MeV S-ions and RTA'd at 1000°C for 10 s showed a buried layer of extended defects with unfaulted loops towards the top and faulted loops towards the bottom. At higher S fluences, all the loops were unfaulted, some loops coalesced to form a dislocation network, and SiS precipitates were formed. At higher RTA temperatures, all the loops were unfaulted. A few possibilities that could explain the difference in defect character will be discussed.
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