Depth dependence of the second harmonic generation of ion implanted waveguides

Abstract

Summary form only given. Summary from only given. Second harmonic generation within optical waveguides offers the potentiality to elaborate robust, compact and reliable laser sources emitting at short wavelengths for many applications. One of the major problems encountered in producing efficient SHG devices is that the non-linear coefficients in the guiding region may undergo a degradation during the fabrication process. Light ion beam implantation has been used to form optical waveguides in many non-linear crystals. Using this technique it has been shown that the electro-optic coefficients as well as the linear optical properties of the guiding region are well preserved. A detailed characterization of the non-linear capabilities of implanted waveguides is therefore needed. We report on the investigation of the depth dependence of the second harmonic generation properties of H/sup +/ and He/sup +/ implanted LiNbO/sub 3/ waveguides, before and after thermal annealing. The measurement technique used is based on second-harmonic generation occurring during normal reflection from the polished end face of the sample.