Deprotection blur in extreme ultraviolet photoresists: Influence of base loading and post-exposure bake temperature

Abstract

The deprotection blur of Rohm and Haas XP 5435, XP 5271, and XP 5496 extreme ultraviolet photoresists has been determined as their base weight percent is varied. The authors have also determined the deprotection blur of TOK EUVR P1123 photoresist as the post-exposure bake temperature is varied from 80to120°C. In Rohm and Haas XP 5435 and XP 5271 resists seven times and three times (respective) increases in base weight percent reduce the size of successfully patterned 1:1 line-space features by 16 and 8nm with corresponding reductions in deprotection blur of 7 and 4nm. In XP 5496 a seven times increase in base weight percent reduces the size of successfully patterned 1:1 line-space features from 48to38nm without changing deprotection blur. In TOK EUVR P1123 resist, a reduction in post-exposure bake temperature from 100to80°C reduces deprotection blur from 21to10nm and reduces patterned line-edge roughness from 4.8to4.1nm.