Depressing of Cu Cu bonding temperature by composting Cu nanoparticle paste with Ag nanoparticles

Abstract

Abstract In this paper, we proposed a depressing bonding temperature method for Cu Cu bonding with nanoparticle paste. The paste was prepared by composting dominant Cu nanoparticles with Ag nanoparticles of lower sintering temperature, where the average nanoparticle size of Cu and Ag was 61.02 and 69.25 nm, respectively. The reliable bonding was successfully achieved at the temperature of 250 °C, the pressure of 1.12 MPa and the protection of Ar-H2 gas mixture comparing with pure Cu nanoparticles paste. An optimal resistivity of sintered Cu-Ag composite nanoparticle paste can achieve 1.99 × 10−7 Ω m with the 2:1 molar ratio of Cu to Ag, and the largest shear strength of the bonded Cu-Cu joint can reach 25.41 MPa. The underlying sintering mechanism of the composited nanoparticles was discussed. It suggests the compositing with Ag nanoparticles is a practical strategy towards lowering the bonding temperature for Cu-based interconnect. The experimental process can be easily implemented, the bonding temperature and the performance can satisfy the packaging requirements of current 3D-IC. The developed Cu-Ag composite nanoparticle paste is also promising for packaging of other thermal and force sensitive chips.