Abstract

Sputtering-derived InGaZnO4 (IGZO) thin films were grown on quartz substrates and undergone post-deposition annealing at 700 °C for 2hr in N2 ambient. The influence of deposition time or film thickness on the morphological, structural and optical properties of polycrystalline IGZO thin films has been systematically investigated by means of characterization from field-emission scanning electron microscopy (FESEM), atomic force microscopy (AFM), high resolution X-ray diffraction (HRXRD) and ultraviolet–visible–near infrared (UV–Vis–NIR) spectrophotometer. Results of AFM have shown that the root-mean-square (RMS) surface roughness of the IGZO films increases from 0.888 to 2.640 nm as the deposition time is extended from 50 to 250min. Analysis of XRD indicates that all the films are in polycrystalline phase, with crystallites growing into larger size accordingly to increasing deposition time. Appealingly and scarcely ever reported, the XRD diffraction planes can be separated into three domains, such as (0 0 l), (1 0 l) and (1 1 l) with different growth thicknesses. Optical measurement suggests that the optical bandgap have redshifted from 3.55 to 3.31eV at longer deposition time. Related mechanics about the change in physical properties against deposition time have been elaborated in detail. The validity of Swanepoel method, 1983 in deriving the refractive index of thick IGZO films has also been discussed.

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