Abstract
In this work, we demonstrate that by using H2O based thermal atomic layer deposited (ALD) Al2O3 films, excellent passivation (emitter saturation current density of ∼28 fA/cm2) on industrial highly boron p+-doped silicon emitters (sheet resistance of ∼62 Ω/sq) can be achieved. The surface passivation of the Al2O3 film is activated by a fast industrial high-temperature firing step identical to the one used for screen printed contact formation. Deposition temperatures in the range of 100-300 °C and peak firing temperatures of ∼800 °C (set temperature) are investigated, using commercial-grade 5″ Cz silicon wafers (∼5 Ω cm n-type). It is found that the level of surface passivation after activation is excellent for the whole investigated deposition temperature range. These results are explained by advanced computer simulations indicating that the obtained emitter saturation current densities are quite close to their intrinsic limit value where the emitter saturation current is solely ruled by Auger recombination. The process developed is industrially relevant and robust.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
