Abstract
In this work, effect of deposition temperature on the microstructure and gas sensitivity of tellurium thin films was studied. Tellurium thin films with different deposition temperatures were deposited on Al2O3 substrate by thermal evaporation. X-ray diffraction (XRD) analysis and scanning electron microscope (SEM) were used for characterizing the prepared samples. XRD patterns indicated that as deposition temperature increased, the crystallinity of the films, also, increased. SEM micrographs showed that the grain size increased and the grain edges became clearer with deposition temperature increase. Studying the effect of depositing temperature on H2S gas sensing properties of Te thin films showed that deposition temperature resulted in an increase in the sensitivity and a decrease in response and recovery times. The results of H2S measurement indicated that the response and recovery times can significantly decrease by application of a UV radiation source before sensing.
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