Abstract
We have successfully fabricated Pt/BiFeO 3 / SrRuO 3 /SrTiO 3 resistive devices with magnetron sputtering at different deposition temperatures and thicknesses. The resistive behaviors and conduction mechanisms can be modulated by the thickness and deposition temperatures of BFO films. BFO films with smaller thickness and higher deposition temperature show larger memory window and lower switching voltage possibly due to the more oxygen vacancies and defects.
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