Abstract
In this study, the temperature response of ZnO thin film is investigated in an attempt to enhance its pyroelectric performance. The film is formed on PS and Si substrates utilizing RF&DC magnetron sputtering deposition technique. The outcome of study reveals a pyroelectric coefficient observed from ZnO film on PS which is 40 times higher than that on Si and a pyroelectric voltage as high as 2.4V due to PS's profound effect on film formation, large surface to volume area and low thermal conductivity. Thus, this study can lead the way to a robust, reliable and more efficient pyroelectric operation of ZnO with employment of PS structure.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
