Abstract
The ZnO thin film deposition process by using an atmospheric pressure (AP) plasma jet is studied. In this process, nebulized ZnCl 2 solution is sprayed into the downstream of the nitrogen plasma jet to perform thin film deposition. X-ray diffraction analysis confirms that this AP jet has the capability to convert ZnCl 2 solution to well-crystallized ZnO thin films with a hexagonal wurtzite structure in a short time. This film exhibits a smooth and mirror-like appearance visually. Scanning electron microscopy and atomic force microscopy show that the deposited film is dense and continuous with a root mean square surface roughness of 8.6 nm. A 1.29 nm/s deposition rate is obtained using this process. Given the fast deposition rate, we believe that both the temperature and the reactivity of the plasma play important roles. A ZnO film on a larger substrate is fabricated, which suggests the process capability in large area and continuous processing applications.
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