Abstract
This study introduces the deposition of μc-Si : H layers on vertically well-aligned ZnO nanowires by very high frequency (VHF) plasma enhanced chemical vapor deposition (PECVD). It was found that μc-Si : H deposited on un-etched ZnO nanowires, with a high length-to-diameter aspect ratio, were nail-shaped due to the rapid growth of μc-Si : H along the lateral (0002) plane. By slightly etching the ZnO nanowires prior to μc-Si : H deposition, μc-Si : H films were coated uniformly on the surface of ZnO nanowires. The ZnO nanowires uniformly coated by plasma etching are potentially useful not only for solar cell applications but also for any nanodevice that uses nanowires as a nanoelectrode.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
