Abstract
Undoped indium oxide (In 2O 3) films were deposited on stripe-patterned Si substrates by an original spray chemical vapor deposition (spray CVD) using ethanol solution of indium (III) chloride. The step coverage of the films increased as the deposition temperature decreased. The grooves with 0.18 μm openings were successfully deposited at 253 °C. The step coverage of undoped indium oxide films were a similar tendency though resistivity of that showed the tendency opposite to the ITO film. Deposition mechanism of the undoped indium oxide films on stripe-patterned Si substrates was similar to that of the ITO films. The lowest resistivity of the films was 4.1×10 −3 Ω cm for the 260 nm-thick film deposited at 280 °C. The resistivity increased at higher temperature.
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