Abstract
Ti:sapphire films were grown using molten Al–Ti alloy ablation targets with either O2 gas pulses or O2 background reactive medium on sapphire (0001) substrates. The films were characterized by the use of XRD, RHEED, AFM, and XPS. While the films deposited at a substrate temperature of 650 °C showed three-dimensional epitaxial growth, the films deposited at 1000 °C exhibited a two-dimensional structure. Annealing of the low-temperature deposited films improved the crystal quality but failed to improve the surface morphology. Ti exists in the host sapphire lattice in the form of Ti3+ for films deposited at lower temperatures, whereas it assumes the tetravalent form in the high-temperature deposited films. The valence states of Ti identified by XPS studies are in agreement with low-temperature luminescence results.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Applied Physics A: Materials Science & Processing
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
