Abstract
Ta 2O 5 and SiO 2 multilayer stacks have been deposited on silicon (100) substrate at 850 °C and 550 °C by a new process, which consists of injecting small and accurate quantities of precursor into an LPCVD reactor. Injections of the metalorganic precursors of tantalum and silicon have been achieved with two high speed electro-valves. AFM and TEM characterizations show that Ta 2O 5 thin film deposited at 850 °C has a very rough surface, whereas at 600 °C it presents a smooth surface. From the TEM images of the multilayers, a similar behavior is observed.
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