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Abstract
, , , and are general silicides used today in semiconductor devices. thin films have been proposed, studied and used recently in CMOS technology extensively to reduce sheet resistance of polysilicon and region. However, there are several serious problems encountered because is oxidized and forms a native oxide layer at the interface between and . In this study, we have introduced 20 gas from top to bottom of the furnace in order to control native oxide films between and film. In resulting SEM photographs, we have observed that the native oxide films at the surface of film are removed using the long injector system.
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