Abstract
The free metal particles pollution has been a severe problem affecting the safety operation of gas insulated transmission lines (GIL) system and causes insulation failure. In this paper, a facile insulation film deposition method by using atmospheric pressure dielectric barrier discharge (AP-DBD) plasma was introduced. The SiO x film was deposited on copper surface to improve the lift-off voltage of metal particles. The film composition, surface morphology and film thickness based on the plasma deposition time were well studied. The results showed that deposited film was composed with Si- O-Si group, Si-OH group along with small amount of inorganic groups (CH 2 and CH 3 ). The oxidation degree and film thickness were enhanced when plasma treatment time was longer. The theoretical model of particle lift-off voltage was calculated before and after surface coating. After the electrode covered with SiO x insulation film, the lifting voltage of metal particles improved by about 38%, which agreed well with the prediction value. Our results proved that SiO x film deposited by AP-DBD was a very effective method for lift-off voltage improvement.
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