Abstract
insulating layers were first deposited onto GaN by photochemical vapor deposition (photo-CVD) technology using a deuterium lamp as the excitation source. Physical, chemical, and electrical characteristics of the metal-insulator-semiconductor (MIS) capacitors are reported for the first time. It was also found that the limiting factor of growth rate was the number of and molecules available to provide excited Si and O atoms. Furthermore, it was found from high-frequency capacitance-voltage measurements that the photo-CVD interface state density, was estimated to be for the photo-CVD layers prepared at 300°C. With an applied field of 4 MV/cm, the oxide leakage current density was found to be only © 2003 The Electrochemical Society. All rights reserved.
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