Abstract
Deposition of SiO2 thin films by the unfocused ArF excimer laser photolysis of Si2H6/N2O mixtures in a parallel configuration has been studied in the low substrate-temperature range of 30-400°C. The refractive index of oxide films agreed with that of stoichiometric SiO2 in the substrate-temperature range of 50-400°C. Basic properties of the deposited films were studied as a function of the substrate temperature, the deposition time, the laser repetition rate, the total pressure, and the N2O/Si2H6 flow ratio. The maximum growth rate was ∼70 Å/min at a substrate temperature of 400°C, a laser repetition rate of 50 Hz, a total pressure of 1 Torr, and a N2O/Si2H6 flow ratio of ∼1200.
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