Abstract
ABSTRACTSilicon dioxide films deposited on InP substrates are obtained in a reduced pressure, air and water cooled horizontal CVD reactor, with a rapid thermal heating. Deposition temperature as high as 700°C could be utilized with no degradation of the InP surface. At this temperature the resulting silicon dioxide films have excellent structural and electrical properties. MIS capacitors fabricated on InP substrates have been tested and a transistor behaviour has been observed on a first set of InP MISFETs. In situ processing for surface preparation prior to deposition can be utilized with this technique. A first attempt of in situ multiprocessing was carried on silicon substrates and is presented here.
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