Abstract
In this study, inorganic silicon oxide (SiOx)/organic silicon (SiCxHy) stacked layers were deposited by a radio frequency inductively coupled plasma chemical vapor deposition system as a gas diffusion barrier for organic light-emitting diodes (OLEDs). The effects of thicknesses of SiOx and SiCxHy layers on the water vapor transmission rate (WVTR) and residual stress were investigated to evaluate the encapsulation capability. The experimental results showed that the lowest WVTR and residual stress were obtained when the thicknesses of SiOx and SiCxHy were 300 and 30 nm, respectively. Finally, different numbers of stacked pairs of SiOx/SiCxHy were applied to OLED encapsulation. The OLED encapsulated with the six-pair SiOx/SiCxHy exhibited a low turn-on voltage and low series resistance, and device lifetime increased from 7 h to more than 2000 h.
Highlights
Organic light-emitting diodes (OLEDs) have been attracting increasing attention recently because of their low production costs, fast response time, flexibility, and high efficiency
It is necessary for silicon oxide (SiOx) to have a thickness of a few micrometers for it to be used as an encapsulation layer
The critical values of the thickn3esosf 8 and residual stress for the SiOx single layer need to be determined, and the SiOx can be stacked with a SiCxHy layer of an appropriate thickness to balance the residual stress
Summary
Organic light-emitting diodes (OLEDs) have been attracting increasing attention recently because of their low production costs, fast response time, flexibility, and high efficiency. The organic and electrode materials in OLED devices are very sensitive to moisture and oxygen, making it important to develop encapsulation against moisture permeation. To solve these problems, the typical glass-lid encapsulation method has been used [1]. For flexible OLED devices, thin-film encapsulations are regarded as an alternative technology with immense prospects [2,3,4]. ICPCVD technology is promising and is widely used as a high-density plasma source. ICPCVD provides higher deposition rates due to higher dissociation efficiency and low plasma sheath potential near the chamber wall, reducing ion bombardment and enhancing uniformity [14]. Organic silicon usually refers to compounds containing silicon-carbon and carbon-hydrogen bonds [17,18]
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