Abstract
A model of a CVD process based on a pyrolytic reaction is presented. Various types of growth rate control by different elementary physical processes occuring during the deposition of the layer are discussed. The experimental data published for the deposition of polysilicon on amorphous SiO 2 by pyrolysis of SiH 4 in N 2 serves as an experimental verification of the theory. A formula describing the growth rate dependence on process parameters and conclusion concerning the definition of the diffusive region given by the model are in good agreement with the experiment.
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