Abstract
A novel method was applied to realize the uniform and dense pentacene thin film on the elastic polydimethylsiloxane (PDMS) dielectric layer via vacuum deposition. The oxygen (O2) plasma treatment followed by octadecyltrichlorosilane (OTS) vapor treatment was found to be important for the successful deposition of pentacene thin film with large grain size and hence high field-effect mobility. The highest mobility of the obtained pentacene-based organic thin-film transistors (OTFTs) was 0.65 cm $^{2}\text{V}^{-1}\text{s}^{-1}$ at the optimized condition with O2 plasma treatment of 100 s and OTS treatment of 7 h. Furthermore, the flexible pentacene OTFTs based on PDMS dielectric layer were successfully fabricated. This letter opens up the capability of PDMS as dielectric layer for the fabrication of the vacuum-depositeddevices, exhibiting a strong potential for future large-scale flexible and conformal electronics.
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