Deposition of non-graphitic carbon films by low carbon particle energies

Abstract

In depositing carbon films without hydrogen at low carbon particle energies by radio frequency sputtering (up to some eV) in argon or by noble gas ion-activated electron beam evaporation (up to about 10 −1 eV), it was possible to prepare adherent, non-graphitic carbon films at low deposition temperatures, which is of interest for application. At these low film-forming carbon particle energies, especially by the modified evaporation method, the mass of energetic ions additionally bombarding the growing film (argon, neon and helium), the ion energy (0–1600 eV) and the ratio of energetic noble gas ions to evaporated carbon particles (0– ∼5) are important parameters influencing the film growth. Finally, rough considerations of the effect of varying ion angles of incidence on the resulting carbon films and the necessity of intensive process simulations for a deeper physical understanding are given.