Abstract
We present the preparation of a semiconductor gas sensor based on porous nanostructured In2O3 thin films. The In2O3 thin films have been deposited on preheated glass substrates by a spray pyrolysis technique at three substrate temperatures (i.e., 400°C, 450°C, and 500°C). The structural and morphological properties of the films were investigated by means of x-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), and fourier transform infrared spectroscopy. The substrate temperature during the film synthesis is found to be the most important factor and must be controlled with precision. It was observed that grain size of the films increased, and the surface roughness decreased with elevating substrate temperature. The sensitivity of the synthesized films was also measured across a range of operating temperature and ethanol concentration. Gas-sensing properties of ethanol shows that the cubic In2O3 nanostructures deposited at the lowest substrate temperature had the highest response.
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