Abstract
ABSTRACTNanocrystalline thin films of tin (IV) oxide (cassiterite) have been deposited from aqueous solutions of tin (IV) chloride and hydrochloric acid at 80°C. Substrates were {100} single-crystal silicon wafers, with and without silanol-anchored, sulfonate-terminated organic self-assembled monolayers (SAMs). Using flowing solutions, films with thicknesses of up to 1 μtm have been grown, whereas the thickness of the films from static solutions is limited to about 80 nm. The films were characterized using transmission electron microscopy and Rutherford backscattering spectroscopy. The role of the flow rate and configuration of the deposition chamber is discussed.
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