Abstract
Hydrogenated microcrystalline silicon–carbon (μc-Si1−xCx:H) films have been grown in a plasma enhanced chemical vapour deposition system from silane–methane gas mixtures highly diluted in hydrogen. The effects of RF power, hydrogen dilution and substrate temperature on μc-Si1−xCx:H properties have been investigated. The increase in RF power reduces the average crystallite size of Si, enhances the carbon fraction, C/(C+Si), and causes a decrease in dark conductivity. The hydrogen dilution ratio R, [H2]/([SiH4]+[CH4]), strongly affects the structure of the films. For R<100 the hydrogenated silicon–carbon films are amorphous, while for R⩾100 the alloys are microcrystalline. Under suitable deposition conditions μc-Si1−xCx:H films can be grown in the substrate temperature range of 200–400 °C.
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