Deposition of metal thin films using a hollow cathode hydrogen discharge

Abstract

Approximately 30 to 40 years ago the group of Stan Vepřek of the University of Zurich described the fabrication of silicon thin films by formation and decomposition of silicon hydride. In their paper they described how pieces of silicon exposed to a low-pressure hydrogen plasma could promote the formation of a volatile silicon hydride. The hydride was then transported to a hot substrate which caused its thermal decomposition and the formation of the silicon film.Hollow cathodes under appropriate experimental conditions can produce a semi-resonant high-density plasma. In a previous study we used such a high-density hydrogen plasma to etch pieces of quartz but under extreme conditions, we observed that rather than etching there was deposition of a thin film of the metal used for the electrode of the hollow cathode.In this paper we describe the etching of the metal (Mo or Ta) lining of a water-cooled cylindrical hollow cathode by a high-density hydrogen plasma. The metal hydride vapour generate in the plasma by chemical sputtering was directed, by the gas flow, to the quartz substrates which were maintained at various temperatures in excess of 573 K. Here the metal hydride was thermal decomposed, and a thin film of the metal was formed. To improve the experimental reproducibility a special substrate heater was constructed such that four quartz substrates could be simultaneously exposed to the metal hydride vapour, but with each substrate at a different temperature: each approximately 30.3 K greater than the neighbouring one. In this way, depositions under identical plasma conditions could be carried out at the same time, but at four different temperatures. We report the deposition rate as a function of the substrate temperature, the hydrogen gas flow and the RF or P-DC plasma power applied to the hollow cathode.