Abstract
Abstract Nitrides of metallic elements like Ti, Mo and Al were synthesized by ion beam-assisted deposition (IBAD). This technique was provided via dual ion beam deposition method in an apparatus based on two Kaufman ion beam sources. In our study an influence of the energy of assisting nitrogen ions (50–400 eV) and of the substrate temperature (up to 400°C) on the characteristics and properties of deposited thin films (roughness, thickness, chemical composition, structure, electrical and optical properties, etc.) was investigated. Different ex situ analytical techniques and measurements such as XPS, RBA, XRD, STM, profilometry, ellipsometry and other methods were applied. The composition of thin films prepared by the sputtering of Ti, Mo and Al targets was close to oxinitrides for all ion energies (fluxes). The nitrogen content in all films was increased by assisting ion bombardment; however, it sustained under their stoichiometric values. Structure of all thin films was generally dependent on ion beam energy and substrate temperature. The roughness and thickness (50–400 nm) of the films increased, respectively, decreased with ion energy (flux). Higher substrate temperature (400°C) substantially improved the adhesion of MoN films to silicon substrates. A significant influence of the assisting ion beam on electrical resistivity and index of refraction of Ti–N and Al–N films was observed.
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