Abstract
To study the possibility of group-I elements as p type dopants, potassium (K) has been used to prepare p-ZnO thin films deposited on (0001) Al 2O 3 substrates by radio frequency magnetron sputtering technique. The electrical and structure properties of as-grown films have been mainly investigated using Hall measurement, X-ray diffraction (XRD), atom force microscopy (AFM) and X-ray photoelectron spectroscopy (XPS). The K-doped ZnO films exhibit p type conductivity, and the best sample is obtained at 500 °C substrate temperature and 30% oxygen partial pressure with a hole carrier concentration of 8.92 × 10 17 cm − 3 , resistivity of 1.8 Ω cm, and hole mobility of 3.89 cm 2/V s. One dense and uniform surface is also observed from the K-doped films with an average grain size of 8.3 nm and surface roughness of 98.3 nm. The ratio of Zn, O and K atoms in films is 1:1.75:0.06.
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