Deposition of indium tin oxide by atmospheric pressure chemical vapour deposition

Abstract

We report the deposition of indium tin oxide (ITO) by atmospheric pressure chemical vapour deposition (APCVD). This process is potentially scalable for high throughput, large area production. We utilised a previously unreported precursor combination; dimethylindium acetylacetonate, [Me2In(acac)] and monobutyltintrichloride, MBTC.[Me2In(acac)] is a volatile solid. It is more stable and easier to handle than traditional indium oxide precursors such as pyrophoric trialkylindium compounds. Monobutyltintrichloride (MBTC) is also easily handled and can be readily vaporised. It is compatible with the process conditions required for using [Me2In(acac)].Cubic ITO was deposited at a substrate temperature of 550°C with growth rates exceeding 15nm/s and growth efficiencies of between 20 and 30%. Resistivity was 3.5×10−4Ωcm and transmission for a 200nm film was >85% with less than 2% haze.