Abstract
By using strongly hydrogen diluted silane as a reactant gas source [C(=SiH4/(SiH4+H2))<5%] in a conventional diode PECVD system, we have deposited high quality a-Si:H films which exhibit almost no Steable-Wronski (S-W) effect. The [H] radical in rf plasma erodes the growing surface and eliminates the weak Si-Si bonds, thus reducing the density of metastable defects of a-Si:H films and causing the amorphous network to be more perfect. Our results show that as C value decreases from 5.4% to 0.8%, the peak location of TO mode in Raman spectra changes from 480 to 500 cm-1, the average distortion of bond angles Δθ, which is calculated from the width of half full height of TO peaks, reduces from 9.0° to 3.8°. The hydrogen content CH of the samples which show almost no S-W effect is less than 10 at%.
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