Abstract
Summary form only given Hydrogenated amorphous silicon (a-Si:H) films have been commonly prepared by glow discharge decomposition of silane (SiH/sub 4/) using capacitively coupled plasmas (CCP). In course of the film deposition with CCP, however, substrates must be heated at moderate temperatures around 250/spl deg/C to obtain high quality films. This fact makes it impossible to deposit films on materials with no heat resistance such as polymer sheets. To break through this problem, a-Si:H deposition by ECR plasmas has been proposed. Inductively coupled plasmas (ICPs) are also very attractive for a-Si:H film deposition because high density plasmas at low pressures can be produced with compact and simple configurations compared with ECR discharges. We, in this paper, demonstrate deposition of high photo-conductivity (/spl sim/10/sup -5/ /spl Omega//sup -1/ cm/sup -1/) a-Si:H films at low substrate temperature (/spl sim/40/spl deg/C), using a SiH/sub 4/, ICP. The apparatus consists of a stainless steel vessel (50 cm in length, 20 cm/spl times/20 cm in cross section) and a Pyrex tube (16 cm in diam.) with a quartz liner. An rf power (13.56 MHz, <1 kW) is coupled to the plasma through two types of water-cooled two turn loop antennas; in type I, the antenna is wound to the Pyrex tube, and in type II, the Pyrex tube is removed and the antenna is immersed in the plasma. Typical SiH/sub 4/, pressure before the discharge is 0.1-2 Pa. Plasma densities measured by a plasma oscillation method are /spl sim/10/sup 11/ cm/sup -3/ at discharge powers of /spl sim/800 W. To evaluate film properties, photo- and dark-conductivities are measured with an AM1 or AM1.5 light sources of 100 mW/cm/sup 2/. Optical band gap and hydrogen concentration are measured by a UV spectrometer and a Fourier transformed infra-red spectrometer (FT-IR), respectively. Photo- and dark-conductivities are measured as a function of rf power, SiH/sub 4/, pressure and substrate position with respect to the gas feed position.
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