Abstract
We proposed a methodology for fabricating a film by the simultaneous injections of O+ ions and hexamethyldigermane (HMDG) to a substrate. The O+-ion energy was set at 50 eV. After the experimental trial, we found a film deposited on the substrate. The analyses of the film with X-ray photoelectron spectroscopy and Fourier transform infrared spectroscopy showed that the deposited film was germanium dioxide (GeO2). It was also noted that no film deposition occurred when HMDG was supplied to substrates without O+-ion beam injections. In conclusion, the low-energy O+-ion beam induced deposition using HMDG was found to be useful for the deposition of GeO2 films.
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