Abstract
The potential application of [t-Bu 2 GaSbEt 2 ] 2 (1) to serve as a single-source precursor for the deposition of GaSb films was investigated in detail. Crystalline GaSb films (sphalerite type) were grown on Si(100) by high-vacuum metal-organic chemical vapor deposition between 350 and 550 °C without the use of any carrier gas. The thermal properties of 1 were investigated by differential scanning calorimetry and thermogravimetric analysis/differential thermal analysis, whereas the GaSb films were characterized in detail by means of X-ray diffraction, scanning electron microscopy, transmission electron microscopy, atomic force microscopy, energy-dispersive X-ray spectroscopy, electron energy loss spectroscopy, and Auger electron spectroscopy.
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