Abstract
This paper reports the deposition of diamond-like carbon (DLC) films on Si , using a low energy (1.45 kJ) dense plasma focus assisted sputtering of graphite insert at the tip of the tapered anode. The substrates are placed in front of the anode at different axial and angular positions and are exposed to multiple focus shots. The information regarding the DLC structure is acquired by using Raman spectroscopy. The spectra are characterized by two broad bands known as “G-band” and “D-band”. The results point towards the formation of DLC films with both sp3 (diamond like) and sp2 (graphite like) domains. In X-ray diffraction (XRD) pattern, no additional peak is observed except a peak at 2θ = 69° which corresponds to the silicon (Si) substrate. The intensity of Si peak is reduced after treatment indicating the deposition of amorphous carbon. Scanning electron microscopy (SEM) results demonstrate that the smoothness of the film increases with increasing the substrate angular positions with respect to the anode axis. Energy dispersive X-ray (EDX) analysis reveals that the films deposited at lower axial and angular positions are thicker which is complemented by the cross-sectional views of the films.
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